Quantum size effects in TiO(2) thin films grown by atomic layer deposition

We study the atomic layer deposition of TiO(2) by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H(2)O on Si/SiO(2) substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to f...

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Autores principales: Tallarida, Massimo, Das, Chittaranjan, Schmeisser, Dieter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2014
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3943868/
https://www.ncbi.nlm.nih.gov/pubmed/24605275
http://dx.doi.org/10.3762/bjnano.5.7
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author Tallarida, Massimo
Das, Chittaranjan
Schmeisser, Dieter
author_facet Tallarida, Massimo
Das, Chittaranjan
Schmeisser, Dieter
author_sort Tallarida, Massimo
collection PubMed
description We study the atomic layer deposition of TiO(2) by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H(2)O on Si/SiO(2) substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO(2) in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.
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spelling pubmed-39438682014-03-06 Quantum size effects in TiO(2) thin films grown by atomic layer deposition Tallarida, Massimo Das, Chittaranjan Schmeisser, Dieter Beilstein J Nanotechnol Full Research Paper We study the atomic layer deposition of TiO(2) by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H(2)O on Si/SiO(2) substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO(2) in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems. Beilstein-Institut 2014-01-22 /pmc/articles/PMC3943868/ /pubmed/24605275 http://dx.doi.org/10.3762/bjnano.5.7 Text en Copyright © 2014, Tallarida et al. https://creativecommons.org/licenses/by/2.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Tallarida, Massimo
Das, Chittaranjan
Schmeisser, Dieter
Quantum size effects in TiO(2) thin films grown by atomic layer deposition
title Quantum size effects in TiO(2) thin films grown by atomic layer deposition
title_full Quantum size effects in TiO(2) thin films grown by atomic layer deposition
title_fullStr Quantum size effects in TiO(2) thin films grown by atomic layer deposition
title_full_unstemmed Quantum size effects in TiO(2) thin films grown by atomic layer deposition
title_short Quantum size effects in TiO(2) thin films grown by atomic layer deposition
title_sort quantum size effects in tio(2) thin films grown by atomic layer deposition
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3943868/
https://www.ncbi.nlm.nih.gov/pubmed/24605275
http://dx.doi.org/10.3762/bjnano.5.7
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