Cargando…
Fabrication and electrical properties of MoS(2) nanodisc-based back-gated field effect transistors
Two-dimensional (2D) molybdenum disulfide (MoS(2)) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS(2) nanodiscs and their incorporation int...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3943990/ https://www.ncbi.nlm.nih.gov/pubmed/24576344 http://dx.doi.org/10.1186/1556-276X-9-100 |