Fabrication and electrical properties of MoS(2) nanodisc-based back-gated field effect transistors

Two-dimensional (2D) molybdenum disulfide (MoS(2)) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS(2) nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS(2) nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS(2). In addition, we find that the MoS(2) nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 10(5), and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm(2)/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS(2) nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS(2) FETs.