Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has l...

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Detalles Bibliográficos
Autores principales: Sporea, R. A., Trainor, M. J., Young, N. D., Shannon, J. M., Silva, S. R. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3944386/
https://www.ncbi.nlm.nih.gov/pubmed/24599023
http://dx.doi.org/10.1038/srep04295

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3944386/
https://www.ncbi.nlm.nih.gov/pubmed/24599023
http://dx.doi.org/10.1038/srep04295

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