100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies f (T)/f (max) of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated...

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Detalles Bibliográficos
Autores principales: Gardès, Cyrille, Bagumako, Sonia, Desplanque, Ludovic, Wichmann, Nicolas, Bollaert, Sylvain, Danneville, François, Wallart, Xavier, Roelens, Yannick
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2014
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3953642/
https://www.ncbi.nlm.nih.gov/pubmed/24707193
http://dx.doi.org/10.1155/2014/136340

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3953642/
https://www.ncbi.nlm.nih.gov/pubmed/24707193
http://dx.doi.org/10.1155/2014/136340

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