100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies f (T)/f (max) of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated...

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Detalles Bibliográficos
Autores principales: Gardès, Cyrille, Bagumako, Sonia, Desplanque, Ludovic, Wichmann, Nicolas, Bollaert, Sylvain, Danneville, François, Wallart, Xavier, Roelens, Yannick
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2014
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3953642/
https://www.ncbi.nlm.nih.gov/pubmed/24707193
http://dx.doi.org/10.1155/2014/136340
_version_ 1782307393612283904
author Gardès, Cyrille
Bagumako, Sonia
Desplanque, Ludovic
Wichmann, Nicolas
Bollaert, Sylvain
Danneville, François
Wallart, Xavier
Roelens, Yannick
author_facet Gardès, Cyrille
Bagumako, Sonia
Desplanque, Ludovic
Wichmann, Nicolas
Bollaert, Sylvain
Danneville, François
Wallart, Xavier
Roelens, Yannick
author_sort Gardès, Cyrille
collection PubMed
description We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies f (T)/f (max) of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G (ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.
format Online
Article
Text
id pubmed-3953642
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher Hindawi Publishing Corporation
record_format MEDLINE/PubMed
spelling pubmed-39536422014-04-06 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications Gardès, Cyrille Bagumako, Sonia Desplanque, Ludovic Wichmann, Nicolas Bollaert, Sylvain Danneville, François Wallart, Xavier Roelens, Yannick ScientificWorldJournal Research Article We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies f (T)/f (max) of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G (ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime. Hindawi Publishing Corporation 2014-02-23 /pmc/articles/PMC3953642/ /pubmed/24707193 http://dx.doi.org/10.1155/2014/136340 Text en Copyright © 2014 Cyrille Gardès et al. https://creativecommons.org/licenses/by/3.0/ This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Gardès, Cyrille
Bagumako, Sonia
Desplanque, Ludovic
Wichmann, Nicolas
Bollaert, Sylvain
Danneville, François
Wallart, Xavier
Roelens, Yannick
100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
title 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
title_full 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
title_fullStr 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
title_full_unstemmed 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
title_short 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
title_sort 100 nm alsb/inas hemt for ultra-low-power consumption, low-noise applications
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3953642/
https://www.ncbi.nlm.nih.gov/pubmed/24707193
http://dx.doi.org/10.1155/2014/136340
work_keys_str_mv AT gardescyrille 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications
AT bagumakosonia 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications
AT desplanqueludovic 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications
AT wichmannnicolas 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications
AT bollaertsylvain 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications
AT dannevillefrancois 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications
AT wallartxavier 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications
AT roelensyannick 100nmalsbinashemtforultralowpowerconsumptionlownoiseapplications

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