p-n Junction Photocurrent Modelling Evaluation under Optical and Electrical Excitation

Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, has been experimentally investigated under synchronous electrical and optical excitation of silicon photo-diodes. The devices had areas of 8.2 mm(2) and reverse bias saturation currents of the order of 10(-10) A....

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Detalles Bibliográficos
Autores principales: Dervos, Constantine T., Skafidas, Panayotis D., Mergos, John A., Vassiliou, Panayota
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2004
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3954071/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3954071/

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