High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H(2) intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to ac...

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Detalles Bibliográficos
Autores principales: Pallecchi, E., Lafont, F., Cavaliere, V., Schopfer, F., Mailly, D., Poirier, W., Ouerghi, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3972502/
https://www.ncbi.nlm.nih.gov/pubmed/24691055
http://dx.doi.org/10.1038/srep04558

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3972502/
https://www.ncbi.nlm.nih.gov/pubmed/24691055
http://dx.doi.org/10.1038/srep04558

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