Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and...

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Detalles Bibliográficos
Autores principales: Kim, Hee-Dong, Yun, Min Ju, Lee, Jae Hoon, Kim, Kyoeng Heon, Kim, Tae Geun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3980222/
https://www.ncbi.nlm.nih.gov/pubmed/24714566
http://dx.doi.org/10.1038/srep04614

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3980222/
https://www.ncbi.nlm.nih.gov/pubmed/24714566
http://dx.doi.org/10.1038/srep04614

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