Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get s...

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Detalles Bibliográficos
Autores principales: Makhloufi, Hajer, Boonpeng, Poonyasiri, Mazzucato, Simone, Nicolai, Julien, Arnoult, Alexandre, Hungria, Teresa, Lacoste, Guy, Gatel, Christophe, Ponchet, Anne, Carrère, Hélène, Marie, Xavier, Fontaine, Chantal
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3984753/
https://www.ncbi.nlm.nih.gov/pubmed/24636335
http://dx.doi.org/10.1186/1556-276X-9-123

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3984753/
https://www.ncbi.nlm.nih.gov/pubmed/24636335
http://dx.doi.org/10.1186/1556-276X-9-123

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