Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes

We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In(3)Sb(1)Te(2) (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase...

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Detalles Bibliográficos
Autores principales: Lee, Y. M., Ahn, D., Kim, J.-Y., Kim, Y. S., Cho, S., Ahn, M., Cho, M.-H., Jung, M. S., Choi, D. K., Jung, M.-C., Qi, Y. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3988486/
https://www.ncbi.nlm.nih.gov/pubmed/24736451
http://dx.doi.org/10.1038/srep04702

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3988486/
https://www.ncbi.nlm.nih.gov/pubmed/24736451
http://dx.doi.org/10.1038/srep04702

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