Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes

We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In(3)Sb(1)Te(2) (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase...

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Detalles Bibliográficos
Autores principales: Lee, Y. M., Ahn, D., Kim, J.-Y., Kim, Y. S., Cho, S., Ahn, M., Cho, M.-H., Jung, M. S., Choi, D. K., Jung, M.-C., Qi, Y. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3988486/
https://www.ncbi.nlm.nih.gov/pubmed/24736451
http://dx.doi.org/10.1038/srep04702
Descripción
Sumario:We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In(3)Sb(1)Te(2) (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase-change), and ~10 Ω(sq) (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms.

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