Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes

We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In(3)Sb(1)Te(2) (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase...

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Autores principales: Lee, Y. M., Ahn, D., Kim, J.-Y., Kim, Y. S., Cho, S., Ahn, M., Cho, M.-H., Jung, M. S., Choi, D. K., Jung, M.-C., Qi, Y. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3988486/
https://www.ncbi.nlm.nih.gov/pubmed/24736451
http://dx.doi.org/10.1038/srep04702
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author Lee, Y. M.
Ahn, D.
Kim, J.-Y.
Kim, Y. S.
Cho, S.
Ahn, M.
Cho, M.-H.
Jung, M. S.
Choi, D. K.
Jung, M.-C.
Qi, Y. B.
author_facet Lee, Y. M.
Ahn, D.
Kim, J.-Y.
Kim, Y. S.
Cho, S.
Ahn, M.
Cho, M.-H.
Jung, M. S.
Choi, D. K.
Jung, M.-C.
Qi, Y. B.
author_sort Lee, Y. M.
collection PubMed
description We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In(3)Sb(1)Te(2) (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase-change), and ~10 Ω(sq) (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms.
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spelling pubmed-39884862014-04-18 Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes Lee, Y. M. Ahn, D. Kim, J.-Y. Kim, Y. S. Cho, S. Ahn, M. Cho, M.-H. Jung, M. S. Choi, D. K. Jung, M.-C. Qi, Y. B. Sci Rep Article We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In(3)Sb(1)Te(2) (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase-change), and ~10 Ω(sq) (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms. Nature Publishing Group 2014-04-16 /pmc/articles/PMC3988486/ /pubmed/24736451 http://dx.doi.org/10.1038/srep04702 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/3.0/ This work is licensed under a Creative Commons Attribution 3.0 Unported License. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/
spellingShingle Article
Lee, Y. M.
Ahn, D.
Kim, J.-Y.
Kim, Y. S.
Cho, S.
Ahn, M.
Cho, M.-H.
Jung, M. S.
Choi, D. K.
Jung, M.-C.
Qi, Y. B.
Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes
title Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes
title_full Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes
title_fullStr Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes
title_full_unstemmed Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes
title_short Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes
title_sort only the chemical state of indium changes in mn-doped in(3)sb(1)te(2) (mn: 10 at.%) during multi-level resistance changes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3988486/
https://www.ncbi.nlm.nih.gov/pubmed/24736451
http://dx.doi.org/10.1038/srep04702
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