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Only the chemical state of Indium changes in Mn-doped In(3)Sb(1)Te(2) (Mn: 10 at.%) during multi-level resistance changes
We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In(3)Sb(1)Te(2) (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3988486/ https://www.ncbi.nlm.nih.gov/pubmed/24736451 http://dx.doi.org/10.1038/srep04702 |