Electrochemically deposited gallium oxide nanostructures on silicon substrates

We report a synthesis of β-Ga(2)O(3) nanostructures on Si substrate by electrochemical deposition using a mixture of Ga(2)O(3), HCl, NH(4)OH, and H(2)O. The presence of Ga(3+) ions contributed to the deposition of Ga(2)O(3) nanostructures on the Si surface with the assistance of applied potentials....

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Detalles Bibliográficos
Autores principales: Ghazali, Norizzawati Mohd, Mahmood, Mohamad Rusop, Yasui, Kanji, Hashim, Abdul Manaf
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3995439/
https://www.ncbi.nlm.nih.gov/pubmed/24629107
http://dx.doi.org/10.1186/1556-276X-9-120

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3995439/
https://www.ncbi.nlm.nih.gov/pubmed/24629107
http://dx.doi.org/10.1186/1556-276X-9-120

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