Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface

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Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio of >10(2) at 85°C are obtained using a Ti nanolayer to form a W/TiO(x)/TaO(x)/W str...

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Detalles Bibliográficos
Autores principales: Prakash, Amit, Maikap, Siddheswar, Chiu, Hsien-Chin, Tien, Ta-Chang, Lai, Chao-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3999741/
https://www.ncbi.nlm.nih.gov/pubmed/24791160
http://dx.doi.org/10.1186/1556-276X-9-152

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3999741/
https://www.ncbi.nlm.nih.gov/pubmed/24791160
http://dx.doi.org/10.1186/1556-276X-9-152

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