Role of microstructures on the M1-M2 phase transition in epitaxial VO(2) thin films

Vanadium dioxide (VO(2)) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films...

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Detalles Bibliográficos
Autores principales: Ji, Yanda, Zhang, Yin, Gao, Min, Yuan, Zhen, Xia, Yudong, Jin, Changqing, Tao, Bowan, Chen, Chonglin, Jia, Quanxi, Lin, Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4010922/
https://www.ncbi.nlm.nih.gov/pubmed/24798056
http://dx.doi.org/10.1038/srep04854

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4010922/
https://www.ncbi.nlm.nih.gov/pubmed/24798056
http://dx.doi.org/10.1038/srep04854

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