Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization

A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Ra...

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Detalles Bibliográficos
Autores principales: Yen, Wen-Chun, Chen, Yu-Ze, Yeh, Chao-Hui, He, Jr-Hau, Chiu, Po-Wen, Chueh, Yu-Lun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4014979/
https://www.ncbi.nlm.nih.gov/pubmed/24810224
http://dx.doi.org/10.1038/srep04739

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4014979/
https://www.ncbi.nlm.nih.gov/pubmed/24810224
http://dx.doi.org/10.1038/srep04739

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