Charge transport mechanisms and memory effects in amorphous TaN(x) thin films

Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostr...

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Detalles Bibliográficos
Autores principales: Spyropoulos-Antonakakis, Nikolaos, Sarantopoulou, Evangelia, Drazic, Goran, Kollia, Zoe, Christofilos, Dimitrios, Kourouklis, Gerasimos, Palles, Dimitrios, Cefalas, Alkiviadis Constantinos
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4016540/
https://www.ncbi.nlm.nih.gov/pubmed/24134740
http://dx.doi.org/10.1186/1556-276X-8-432

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4016540/
https://www.ncbi.nlm.nih.gov/pubmed/24134740
http://dx.doi.org/10.1186/1556-276X-8-432

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