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Charge transport mechanisms and memory effects in amorphous TaN(x) thin films
Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostr...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4016540/ https://www.ncbi.nlm.nih.gov/pubmed/24134740 http://dx.doi.org/10.1186/1556-276X-8-432 |