Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm(2)/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm(2)/vs and wide-bandgap is not suitable fo...

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Detalles Bibliográficos
Autores principales: Lee, Eunha, Benayad, Anass, Shin, Taeho, Lee, HyungIk, Ko, Dong-Su, Kim, Tae Sang, Son, Kyoung Seok, Ryu, Myungkwan, Jeon, Sanghun, Park, Gyeong-Su
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4018964/
https://www.ncbi.nlm.nih.gov/pubmed/24824778
http://dx.doi.org/10.1038/srep04948

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4018964/
https://www.ncbi.nlm.nih.gov/pubmed/24824778
http://dx.doi.org/10.1038/srep04948

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