Electron transport of WS(2) transistors in a hexagonal boron nitride dielectric environment

We present the first study of the intrinsic electrical properties of WS(2) transistors fabricated with two different dielectric environments WS(2) on SiO(2) and WS(2) on h-BN/SiO(2), respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natura...

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Detalles Bibliográficos
Autores principales: Withers, Freddie, Bointon, Thomas Hardisty, Hudson, David Christopher, Craciun, Monica Felicia, Russo, Saverio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4021321/
http://dx.doi.org/10.1038/srep04967

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4021321/
http://dx.doi.org/10.1038/srep04967

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