Fabrication of porous silicon nanowires by MACE method in HF/H(2)O(2)/AgNO(3) system at room temperature

In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the ‘one-pot procedure’ metal-assisted chemical etching (MACE) method in the HF/H(2)O(2)/AgNO(3) system at room temperature. The effects of H(2)O(2) concentration on the nanostructure of silicon nano...

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Detalles Bibliográficos
Autores principales: Li, Shaoyuan, Ma, Wenhui, Zhou, Yang, Chen, Xiuhua, Xiao, Yongyin, Ma, Mingyu, Zhu, Wenjie, Wei, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4029987/
https://www.ncbi.nlm.nih.gov/pubmed/24910568
http://dx.doi.org/10.1186/1556-276X-9-196

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4029987/
https://www.ncbi.nlm.nih.gov/pubmed/24910568
http://dx.doi.org/10.1186/1556-276X-9-196

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