Surface scattering mechanisms of tantalum nitride thin film resistor

In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-ze...

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Detalles Bibliográficos
Autores principales: Chen, Huey-Ru, Chen, Ying-Chung, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Shih, Chih-Cheng, Chuang, Nai-Chuan, Wang, Kao-Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4030298/
https://www.ncbi.nlm.nih.gov/pubmed/24725295
http://dx.doi.org/10.1186/1556-276X-9-177

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4030298/
https://www.ncbi.nlm.nih.gov/pubmed/24725295
http://dx.doi.org/10.1186/1556-276X-9-177

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