High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(−2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and...

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Detalles Bibliográficos
Autores principales: Yang, Weihuang, Li, Jinchai, Zhang, Yong, Huang, Po-Kai, Lu, Tien-Chang, Kuo, Hao-Chung, Li, Shuping, Yang, Xu, Chen, Hangyang, Liu, Dayi, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046137/
https://www.ncbi.nlm.nih.gov/pubmed/24898569
http://dx.doi.org/10.1038/srep05166

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046137/
https://www.ncbi.nlm.nih.gov/pubmed/24898569
http://dx.doi.org/10.1038/srep05166

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