High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(−2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and...

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Autores principales: Yang, Weihuang, Li, Jinchai, Zhang, Yong, Huang, Po-Kai, Lu, Tien-Chang, Kuo, Hao-Chung, Li, Shuping, Yang, Xu, Chen, Hangyang, Liu, Dayi, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046137/
https://www.ncbi.nlm.nih.gov/pubmed/24898569
http://dx.doi.org/10.1038/srep05166
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author Yang, Weihuang
Li, Jinchai
Zhang, Yong
Huang, Po-Kai
Lu, Tien-Chang
Kuo, Hao-Chung
Li, Shuping
Yang, Xu
Chen, Hangyang
Liu, Dayi
Kang, Junyong
author_facet Yang, Weihuang
Li, Jinchai
Zhang, Yong
Huang, Po-Kai
Lu, Tien-Chang
Kuo, Hao-Chung
Li, Shuping
Yang, Xu
Chen, Hangyang
Liu, Dayi
Kang, Junyong
author_sort Yang, Weihuang
collection PubMed
description High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(−2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
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spelling pubmed-40461372014-06-12 High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability Yang, Weihuang Li, Jinchai Zhang, Yong Huang, Po-Kai Lu, Tien-Chang Kuo, Hao-Chung Li, Shuping Yang, Xu Chen, Hangyang Liu, Dayi Kang, Junyong Sci Rep Article High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(−2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature. Nature Publishing Group 2014-06-05 /pmc/articles/PMC4046137/ /pubmed/24898569 http://dx.doi.org/10.1038/srep05166 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/3.0/ This work is licensed under a Creative Commons Attribution 3.0 Unported License. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/
spellingShingle Article
Yang, Weihuang
Li, Jinchai
Zhang, Yong
Huang, Po-Kai
Lu, Tien-Chang
Kuo, Hao-Chung
Li, Shuping
Yang, Xu
Chen, Hangyang
Liu, Dayi
Kang, Junyong
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
title High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
title_full High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
title_fullStr High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
title_full_unstemmed High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
title_short High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
title_sort high density gan/aln quantum dots for deep uv led with high quantum efficiency and temperature stability
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046137/
https://www.ncbi.nlm.nih.gov/pubmed/24898569
http://dx.doi.org/10.1038/srep05166
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