Simplified ZrTiO( x )-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO( x )/Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO( x )/Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n(+)-Si acts as an Sc...

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Detalles Bibliográficos
Autores principales: Lin, Chia-Chun, Wu, Yung-Hsien, Chang, You-Tai, Sun, Cherng-En
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046995/
https://www.ncbi.nlm.nih.gov/pubmed/24936165
http://dx.doi.org/10.1186/1556-276X-9-275

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046995/
https://www.ncbi.nlm.nih.gov/pubmed/24936165
http://dx.doi.org/10.1186/1556-276X-9-275

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