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Simplified ZrTiO( x )-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode
A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO( x )/Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO( x )/Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n(+)-Si acts as an Sc...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046995/ https://www.ncbi.nlm.nih.gov/pubmed/24936165 http://dx.doi.org/10.1186/1556-276X-9-275 |