Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent...

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Detalles Bibliográficos
Autores principales: Caraveo-Frescas, J. A., Khan, M. A., Alshareef, H. N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4050383/
https://www.ncbi.nlm.nih.gov/pubmed/24912617
http://dx.doi.org/10.1038/srep05243

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4050383/
https://www.ncbi.nlm.nih.gov/pubmed/24912617
http://dx.doi.org/10.1038/srep05243

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