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Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent...
Autores principales: | Caraveo-Frescas, J. A., Khan, M. A., Alshareef, H. N. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4050383/ https://www.ncbi.nlm.nih.gov/pubmed/24912617 http://dx.doi.org/10.1038/srep05243 |
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