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Low-damage direct patterning of silicon oxide mask by mechanical processing

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-p...

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Detalles Bibliográficos
Autores principales: Miyake, Shojiro, Yamazaki, Shohei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051151/
https://www.ncbi.nlm.nih.gov/pubmed/24948891
http://dx.doi.org/10.1186/1556-276X-9-269