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Low-damage direct patterning of silicon oxide mask by mechanical processing
To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-p...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051151/ https://www.ncbi.nlm.nih.gov/pubmed/24948891 http://dx.doi.org/10.1186/1556-276X-9-269 |