Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots

The effect of Sb spray prior to the capping of a GaAs layer on the structure and properties of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) is studied by cross-sectional high-resolution transmission electron microscopy (HRTEM). Compared to the typical GaAs-capped InAs/GaAs QDs,...

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Detalles Bibliográficos
Autores principales: Dai, Liping, Bremner, Stephen P, Tan, Shenwei, Wang, Shuya, Zhang, Guojun, Liu, Zongwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051383/
https://www.ncbi.nlm.nih.gov/pubmed/24948897
http://dx.doi.org/10.1186/1556-276X-9-278

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051383/
https://www.ncbi.nlm.nih.gov/pubmed/24948897
http://dx.doi.org/10.1186/1556-276X-9-278

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