Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots

The effect of Sb spray prior to the capping of a GaAs layer on the structure and properties of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) is studied by cross-sectional high-resolution transmission electron microscopy (HRTEM). Compared to the typical GaAs-capped InAs/GaAs QDs,...

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Autores principales: Dai, Liping, Bremner, Stephen P, Tan, Shenwei, Wang, Shuya, Zhang, Guojun, Liu, Zongwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051383/
https://www.ncbi.nlm.nih.gov/pubmed/24948897
http://dx.doi.org/10.1186/1556-276X-9-278
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author Dai, Liping
Bremner, Stephen P
Tan, Shenwei
Wang, Shuya
Zhang, Guojun
Liu, Zongwen
author_facet Dai, Liping
Bremner, Stephen P
Tan, Shenwei
Wang, Shuya
Zhang, Guojun
Liu, Zongwen
author_sort Dai, Liping
collection PubMed
description The effect of Sb spray prior to the capping of a GaAs layer on the structure and properties of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) is studied by cross-sectional high-resolution transmission electron microscopy (HRTEM). Compared to the typical GaAs-capped InAs/GaAs QDs, Sb-sprayed QDs display a more uniform lens shape with a thickness of about 3 ~ 4 nm rather than the pyramidal shape of the non-Sb-sprayed QDs. Particularly, the dislocations were observed to be passivated in the InAs/GaAs interface region and even be suppressed to a large extent. There are almost no extended dislocations in the immediate vicinity of the QDs. This result is most likely related to the formation of graded GaAsSb immediately adjacent to the InAs QDs that provides strain relief for the dot/capping layer lattice mismatch. PACS: 81.05.Ea; 81.07.-b; 81.07.Ta
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spelling pubmed-40513832014-06-19 Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots Dai, Liping Bremner, Stephen P Tan, Shenwei Wang, Shuya Zhang, Guojun Liu, Zongwen Nanoscale Res Lett Nano Express The effect of Sb spray prior to the capping of a GaAs layer on the structure and properties of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) is studied by cross-sectional high-resolution transmission electron microscopy (HRTEM). Compared to the typical GaAs-capped InAs/GaAs QDs, Sb-sprayed QDs display a more uniform lens shape with a thickness of about 3 ~ 4 nm rather than the pyramidal shape of the non-Sb-sprayed QDs. Particularly, the dislocations were observed to be passivated in the InAs/GaAs interface region and even be suppressed to a large extent. There are almost no extended dislocations in the immediate vicinity of the QDs. This result is most likely related to the formation of graded GaAsSb immediately adjacent to the InAs QDs that provides strain relief for the dot/capping layer lattice mismatch. PACS: 81.05.Ea; 81.07.-b; 81.07.Ta Springer 2014-05-30 /pmc/articles/PMC4051383/ /pubmed/24948897 http://dx.doi.org/10.1186/1556-276X-9-278 Text en Copyright © 2014 Dai et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Dai, Liping
Bremner, Stephen P
Tan, Shenwei
Wang, Shuya
Zhang, Guojun
Liu, Zongwen
Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
title Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
title_full Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
title_fullStr Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
title_full_unstemmed Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
title_short Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
title_sort suppression of dislocations by sb spray in the vicinity of inas/gaas quantum dots
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051383/
https://www.ncbi.nlm.nih.gov/pubmed/24948897
http://dx.doi.org/10.1186/1556-276X-9-278
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