Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques

The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distributi...

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Detalles Bibliográficos
Autores principales: Lee, Hsin-Ying, Huang, Hung-Lin, Tseng, Chun-Yen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051410/
https://www.ncbi.nlm.nih.gov/pubmed/24948884
http://dx.doi.org/10.1186/1556-276X-9-242

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051410/
https://www.ncbi.nlm.nih.gov/pubmed/24948884
http://dx.doi.org/10.1186/1556-276X-9-242

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