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Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques
The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distributi...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4051410/ https://www.ncbi.nlm.nih.gov/pubmed/24948884 http://dx.doi.org/10.1186/1556-276X-9-242 |