Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body

Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, w...

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Detalles Bibliográficos
Autores principales: Jang, Hyun-June, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4055887/
https://www.ncbi.nlm.nih.gov/pubmed/24923751
http://dx.doi.org/10.1038/srep05284

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4055887/
https://www.ncbi.nlm.nih.gov/pubmed/24923751
http://dx.doi.org/10.1038/srep05284

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