In situ observation of step-edge in-plane growth of graphene in a STEM

It is extremely difficult to control the growth orientation of the graphene layer in comparison to Si or III–V semiconductors. Here we report a direct observation of graphene growth and domain boundary formation in a scanning transmission electron microscope, with residual hydrocarbon in the microsc...

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Detalles Bibliográficos
Autores principales: Liu, Zheng, Lin, Yung-Chang, Lu, Chun-Chieh, Yeh, Chao-Hui, Chiu, Po-Wen, Iijima, Sumio, Suenaga, Kazu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059939/
https://www.ncbi.nlm.nih.gov/pubmed/24887183
http://dx.doi.org/10.1038/ncomms5055

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059939/
https://www.ncbi.nlm.nih.gov/pubmed/24887183
http://dx.doi.org/10.1038/ncomms5055

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