Novel synaptic memory device for neuromorphic computing

This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO(2) material. The mechanism behind re...

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Detalles Bibliográficos
Autores principales: Mandal, Saptarshi, El-Amin, Ammaarah, Alexander, Kaitlyn, Rajendran, Bipin, Jha, Rashmi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4061545/
https://www.ncbi.nlm.nih.gov/pubmed/24939247
http://dx.doi.org/10.1038/srep05333

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4061545/
https://www.ncbi.nlm.nih.gov/pubmed/24939247
http://dx.doi.org/10.1038/srep05333

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