Effect of Mechanical Loads on Stability of Nanodomains in Ferroelectric Ultrathin Films: Towards Flexible Erasing of the Non-Volatile Memories

Intensive investigations have been drawn on nanoscale ferroelectrics for their prospective applications such as developing memory devices. In contrast with the commonly used electrical means to process (i.e., read, write or erase) the information carried by ferroelectric domains, at present, mechani...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, W. J., Zheng, Yue, Xiong, W. M., Feng, Xue, Wang, Biao, Wang, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4061556/
https://www.ncbi.nlm.nih.gov/pubmed/24938187
http://dx.doi.org/10.1038/srep05339

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4061556/
https://www.ncbi.nlm.nih.gov/pubmed/24938187
http://dx.doi.org/10.1038/srep05339

Ejemplares similares