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Effect of Mechanical Loads on Stability of Nanodomains in Ferroelectric Ultrathin Films: Towards Flexible Erasing of the Non-Volatile Memories
Intensive investigations have been drawn on nanoscale ferroelectrics for their prospective applications such as developing memory devices. In contrast with the commonly used electrical means to process (i.e., read, write or erase) the information carried by ferroelectric domains, at present, mechani...
Autores principales: | Chen, W. J., Zheng, Yue, Xiong, W. M., Feng, Xue, Wang, Biao, Wang, Ying |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4061556/ https://www.ncbi.nlm.nih.gov/pubmed/24938187 http://dx.doi.org/10.1038/srep05339 |
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