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Effect of Mechanical Loads on Stability of Nanodomains in Ferroelectric Ultrathin Films: Towards Flexible Erasing of the Non-Volatile Memories

Intensive investigations have been drawn on nanoscale ferroelectrics for their prospective applications such as developing memory devices. In contrast with the commonly used electrical means to process (i.e., read, write or erase) the information carried by ferroelectric domains, at present, mechani...

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Detalles Bibliográficos
Autores principales: Chen, W. J., Zheng, Yue, Xiong, W. M., Feng, Xue, Wang, Biao, Wang, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4061556/
https://www.ncbi.nlm.nih.gov/pubmed/24938187
http://dx.doi.org/10.1038/srep05339

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