Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorgani...

Descripción completa

Detalles Bibliográficos
Autores principales: Shon, Jeong Woo, Ohta, Jitsuo, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4066259/
https://www.ncbi.nlm.nih.gov/pubmed/24954609
http://dx.doi.org/10.1038/srep05325

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4066259/
https://www.ncbi.nlm.nih.gov/pubmed/24954609
http://dx.doi.org/10.1038/srep05325

Ejemplares similares