Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure

Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO( x )/TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO( x ) layer with a thickness of 7 nm. A thin layer of TiO( x )N( y ) with a t...

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Detalles Bibliográficos
Autores principales: Maikap, Siddheswar, Jana, Debanjan, Dutta, Mrinmoy, Prakash, Amit
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4066319/
https://www.ncbi.nlm.nih.gov/pubmed/24982604
http://dx.doi.org/10.1186/1556-276X-9-292

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4066319/
https://www.ncbi.nlm.nih.gov/pubmed/24982604
http://dx.doi.org/10.1186/1556-276X-9-292

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