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Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure

Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO( x )/TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO( x ) layer with a thickness of 7 nm. A thin layer of TiO( x )N( y ) with a t...

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Autores principales: Maikap, Siddheswar, Jana, Debanjan, Dutta, Mrinmoy, Prakash, Amit
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4066319/
https://www.ncbi.nlm.nih.gov/pubmed/24982604
http://dx.doi.org/10.1186/1556-276X-9-292
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author Maikap, Siddheswar
Jana, Debanjan
Dutta, Mrinmoy
Prakash, Amit
author_facet Maikap, Siddheswar
Jana, Debanjan
Dutta, Mrinmoy
Prakash, Amit
author_sort Maikap, Siddheswar
collection PubMed
description Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO( x )/TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO( x ) layer with a thickness of 7 nm. A thin layer of TiO( x )N( y ) with a thickness of 3 nm is formed at the TaO( x )/TiN interface, owing to the oxygen accumulation nature of Ti. This memory device shows 100 consecutive switching cycles with excellent uniformity, 100 randomly picked device-to-device good uniformity, and program/erase endurance of >10(3) cycles. It is observed that the 0.6-μm devices show better switching uniformity as compared to the 4-μm devices, which is due to the thinner tungsten (W) electrode as well as higher series resistance. The oxygen-rich TaO( x ) layer at the W/TaO( x ) interface also plays an important role in getting self-compliance resistive switching phenomena and non-linear current-voltage (I-V) curve at low resistance state (LRS). Switching mechanism is attributed to the formation and rupture of oxygen vacancy conducting path in the TaO( x ) switching material. The memory device also exhibits long read endurance of >10(6) cycles. It is found that after 400,000 cycles, the high resistance state (HRS) is decreased, which may be due to some defects creation (or oxygen moves away) by frequent stress on the switching material. Good data retention of >10(4) s is also obtained.
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spelling pubmed-40663192014-06-30 Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure Maikap, Siddheswar Jana, Debanjan Dutta, Mrinmoy Prakash, Amit Nanoscale Res Lett Nano Express Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO( x )/TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO( x ) layer with a thickness of 7 nm. A thin layer of TiO( x )N( y ) with a thickness of 3 nm is formed at the TaO( x )/TiN interface, owing to the oxygen accumulation nature of Ti. This memory device shows 100 consecutive switching cycles with excellent uniformity, 100 randomly picked device-to-device good uniformity, and program/erase endurance of >10(3) cycles. It is observed that the 0.6-μm devices show better switching uniformity as compared to the 4-μm devices, which is due to the thinner tungsten (W) electrode as well as higher series resistance. The oxygen-rich TaO( x ) layer at the W/TaO( x ) interface also plays an important role in getting self-compliance resistive switching phenomena and non-linear current-voltage (I-V) curve at low resistance state (LRS). Switching mechanism is attributed to the formation and rupture of oxygen vacancy conducting path in the TaO( x ) switching material. The memory device also exhibits long read endurance of >10(6) cycles. It is found that after 400,000 cycles, the high resistance state (HRS) is decreased, which may be due to some defects creation (or oxygen moves away) by frequent stress on the switching material. Good data retention of >10(4) s is also obtained. Springer 2014-06-10 /pmc/articles/PMC4066319/ /pubmed/24982604 http://dx.doi.org/10.1186/1556-276X-9-292 Text en Copyright © 2014 Maikap et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Maikap, Siddheswar
Jana, Debanjan
Dutta, Mrinmoy
Prakash, Amit
Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
title Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
title_full Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
title_fullStr Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
title_full_unstemmed Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
title_short Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
title_sort self-compliance rram characteristics using a novel w/tao( x )/tin structure
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4066319/
https://www.ncbi.nlm.nih.gov/pubmed/24982604
http://dx.doi.org/10.1186/1556-276X-9-292
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