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Stochastic switching of TiO(2)-based memristive devices with identical initial memory states

In this work, we show that identical TiO(2)-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the...

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Detalles Bibliográficos
Autores principales: Li, Qingjiang, Khiat, Ali, Salaoru, Iulia, Xu, Hui, Prodromakis, Themistoklis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4067684/
https://www.ncbi.nlm.nih.gov/pubmed/24994953
http://dx.doi.org/10.1186/1556-276X-9-293