Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are dist...

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Detalles Bibliográficos
Autores principales: Chen, Yung-Sheng, Liao, Che-Hao, Kuo, Chie-Tong, Tsiang, Raymond Chien-Chao, Wang, Hsiang-Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4094480/
https://www.ncbi.nlm.nih.gov/pubmed/25024692
http://dx.doi.org/10.1186/1556-276X-9-334

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4094480/
https://www.ncbi.nlm.nih.gov/pubmed/25024692
http://dx.doi.org/10.1186/1556-276X-9-334

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