Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as...

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Detalles Bibliográficos
Autores principales: Liu, Yian, Moura, Mateus S, Costa, Ademir J, de Almeida, Luiz Alberto L, Paranjape, Makarand, Fontana, Marcio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Dove Medical Press 2014
Materias:
Original Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4099195/
https://www.ncbi.nlm.nih.gov/pubmed/25187698
http://dx.doi.org/10.2147/NSA.S58003

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4099195/
https://www.ncbi.nlm.nih.gov/pubmed/25187698
http://dx.doi.org/10.2147/NSA.S58003

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