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The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient
We report a unique growth and migration behavior of Ge nanocrystallites mediated by the presence of Si interstitials under thermal annealing at 900°C within an H(2)O ambient. The Ge nanocrystallites were previously generated by the selective oxidation of SiGe nanopillars and appeared to be very sens...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4099492/ https://www.ncbi.nlm.nih.gov/pubmed/25045342 http://dx.doi.org/10.1186/1556-276X-9-339 |