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Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity, and lattice energy
Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpa...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4104577/ https://www.ncbi.nlm.nih.gov/pubmed/25044003 http://dx.doi.org/10.1038/srep05758 |