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Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity, and lattice energy

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpa...

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Detalles Bibliográficos
Autores principales: Yin, Yan, Cheng, Zengguang, Wang, Li, Jin, Kuijuan, Wang, Wenzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4104577/
https://www.ncbi.nlm.nih.gov/pubmed/25044003
http://dx.doi.org/10.1038/srep05758

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